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| IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM 14 Ampere Low-Side Ultrafast MOSFET Drivers Features * Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes * Latch-Up Protected Over Entire Operating Range * High Peak Output Current: 14A Peak * Wide Operating Range: 4.5V to 25V * High Capacitive Load Drive Capability: 15nF in <30ns * Matched Rise And Fall Times * Low Propagation Delay Time * Low Output Impedance * Low Supply Current General Description The IXDI414/IXDN414 is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDI/N414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, a patent-pending circuit virtually eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. The IXDN414 is configured as a non-inverting gate driver and the IXDI414 is an inverting gate driver. The IXDN414/IXDI414 family are available in standard 8 pin P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM) surface-mount packages. Applications * * * * * * * * * Driving MOSFETs and IGBTs Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram Vcc Vcc P IN ANTI-CROSS CONDUCTION CIRCUIT * OUT N GND GND * Patent Pending Copyright (c) IXYS CORPORATION 2001 First Release IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram Vcc Vcc P IN ANTI-CROSS CONDUCTION CIRCUIT * OUT N GND GND Pin Description And Configuration SYMBOL VCC IN OUT FUNCTION Supply Voltage Input Output DESCRIPTION Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 25V. Input signal-TTL or CMOS compatible. Driver Output. For application purposes, this pin is connected via an external resistor to a Gate of a MOSFET/IGBT. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance. 1 2 3 4 5 Vcc OUT GND IN NC GND Ground IX D X 4 1 4 Y I IX D X 4 1 4 C I 1 VCC 2 IN 3 NC 4 GND I X D X 4 1 4 VCC 8 OUT 7 OUT 6 GND 5 8 PIN DIP (PI) TO220 (CI, CM) TO263 (YI, YM) ORDERING INFORMATION Part Number Package Type Temp. Range Configuration IXDN414PI 8-Pin PDIP -40C to +85C IXDN414CI 5-Pin TO-220 IXDN414CM 5-Pin TO-220 -55C to +125C Non Inverting IXDN414YI 5-Pin TO-263 -40C to +85C IXDN414YM 5-Pin TO-263 -55C to +125C IXDI414PI 8-Pin PDIP -40C to +85C IXDI414CI 5-Pin TO-220 IXDI414CM 5-Pin TO-220 -55C to +125C Inverting IXDI414YI 5-Pin TO-263 -40C to +85C IXDI414YM 5-Pin TO-263 -55C to +125C NOTE: Mounting or solder tabs on all packages are connected to ground * Patent Pending 2 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Absolute Maximum Ratings (Note 1) Parameter Supply Voltage All Other Pins Power Dissipation T CASE 85 o C: TO220 (CI), TO263 (YI) T CASE 125 o C: TO220 (CM), TO263 (YM) 16W 16W 975mW 2W 7.6mW / o C 0.1W /o C Operating Ratings Parameter Maximum Junction Temperature Operating Temperature Range Value 150oC -40oC to 85oC Thermal Impedance (Junction To Case) TO220 (CI, CM), 0.55oC/W TO263 (YI, YM) (JC) Value 25V -0.3V to V CC + 0.3V Power Dissipation, T AMBIENT 25 o C 8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM) Derating Factors (to Ambient) 8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM) Storage Temperature Soldering Lead Temperature (10 seconds maximum) -65 o C to 150 o C 300 o C Electrical Characteristics Unless otherwise noted, TA = 25 oC, 4.5V VCC 25V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC tR tF tONDLY tOFFDLY VCC ICC Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ Output high Output resistance @ Output Low Peak output current Continuous output current (1) Rise time Fall time (1) Test Conditions Min 3.5 Typ Max 0.8 Units V V V A V -5 0V VIN VCC -10 VCC - 0.025 VCC + 0.3 10 0.025 IOUT = 10mA, VCC = 18V IOUT = 10mA, VCC = 18V VCC is 18V 8 Pin Dip (PI) (Limited by pkg power dissipation) TO220 (CI), TO263 (YI) CL=15nF Vcc=18V CL=15nF Vcc=18V CL=15nF Vcc=18V CL=15nF Vcc=18V 4.5 VIN = 3.5V VIN = 0V VIN = + VCC 600 600 14 3 4 27 25 33 34 25 3 10 10 1000 1000 V m m A A A ns ns ns ns V mA A A 22 20 30 31 18 1 0 On-time propagation (1) delay Off-time propagation (1) delay Power supply voltage Power supply current (1) See Figures 3a and 3b Note 1: Operating the device beyond parameters with listed "Absolute Maximum Ratings" may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Specifications subject to change without notice 3 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Figure 3a - Characteristics Test Diagram 5.0V 0V 10uF 25V Vcc 0V IXDI414 Vcc 0V IXDN414 15nF Agilent 1147A Current Probe Figure 3b - Timing Diagrams Non-Inverting (IXDN414) Timing Diagram 5V 90% INPUT 2.5V 10% 0V tONDLY PWMIN tR tOFFDLY tF Vcc 90% OUTPUT 10% 0V Inverting (IXDI414) Timing Diagram 5V 90% INPUT 2.5V 10% 0V tONDLY VCC 90% OUTPUT 10% 0V PWMIN tF tOFFDLY tR 4 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Typical Performance Characteristics Fig. 4 40 Rise Time vs. Supply Voltage Fig. 5 40 Fall Time vs. Supply Voltage 30 CL=15,000 pF 30 Rise Time (ns) Fall Time (ns) 20 7,500 pF 20 CL=15,000 pF 7,500 pF 10 3,600 pF 10 3,600 pF 0 8 10 12 14 16 18 0 8 10 12 14 16 18 Supply Voltage (V) Fig. 6 40 35 40 30 25 Supply Voltage (V) Fig. 7 50 Rise And Fall Times vs. Case Temperature CL = 15 nF, Vcc = 18V Rise Time vs. Load Capacitance 8V 10V 12V tR Rise Time (ns) Time (ns) tF 20 15 10 30 18V 14V 16V 20 10 5 0 -40 0 0k -20 0 20 40 60 80 100 120 5k 10k 15k 20k Temperature (C) Fig. 8 40 Load Capacitance (pF) Fig. 9 3.2 3.0 Fall Time vs. Load Capacitance Max / Min Input vs. Case Temperature VCC=18V CL=15nF 14V 12V 30 8V 10V 2.8 Minimum Input High Max / Min Input (V) 2.6 2.4 2.2 2.0 Fall Time (ns) 16V18V 20 Maximum Input Low 10 1.8 1.6 -60 0 0k -40 -20 0 20 40 o 60 80 100 5k 10k 15k 20k Load Capacitance (pF) 5 Temperature ( C) IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Fig. 11 1000 1000 CL= 30 nF 100 2 MHz 1 MHz 500 kHz 10 100 kHz 50 kHz 100 15 nF Supply Current vs. Load Capacitance Vcc=18V Fig. 12 Supply Current vs. Frequency Vcc=18V Supply Current (mA) Supply Current (mA) 5000 pF 10 2000 pF 1 1 1k 0.1 10k 100k 10 100 1000 10000 Load Capacitance (pF) Fig. 13 1000 Frequency (kHz) Fig. 14 1000 Supply Current vs. Load Capacitance Vcc=12V Supply Current vs. Frequency Vcc=12V CL = 30 nF 100 Supply Current (mA) 2 MHz 1 MHz 500 kHz 10 Supply Current (m A) 100 15 nF 10 5000 pF 2000 pF 1 100 kHz 50 kHz 1 1k 0.1 10k 100k 10 100 1000 10000 Load Capacitance (pF) Fig. 15 1000 Frequency (kHz) Fig. 16 1000 Supply Current vs. Load Capacitance Vcc=8V Supply Current vs. Frequency Vcc=8V 100 CL= 30 nF 15 nF Supply Current (mA) 2 MHz 1 MHz 10 500 kHz Supply Current (mA) 100 10 5000 pF 2000 pF 1 100 kHz 1 50 kHz 1k 10k 100k 0.1 10 100 1000 10000 Load Capacitance (pF) Frequency (kHz) 6 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Fig. 17 50 Propagation Delay vs. Supply Voltage CL=15nF VIN=5V@1kHz Fig. 18 50 Propagation Delay vs. Input Voltage CL=15nF VCC=15V 40 tOFFDLY Propagation Delay (ns) 40 Propagation Delay (ns) tONDLY 30 tONDLY 30 20 20 tOFFDLY 10 10 0 8 10 12 14 16 18 0 2 4 6 8 10 12 Supply Voltage (V) Input Voltage (V) Fig. 19 50 45 40 35 Propagation Delay vs. Case Temperature CL = 2500pF, VCC = 18V Fig. 20 Quiescent Supply Current vs. Case Temperature 0.60 VCC=18V VIN=5V@1kHz Time (ns) tOFFDLY Quiescent Supply Current (mA) tONDLY 0.58 0.56 30 25 20 15 10 -40 -20 0 20 40 60 80 100 120 0.54 0.52 0.50 -40 -20 0 20 40 60 80 Temperature (C) Temperature (oC) Fig. 21 P Channel Output Current vs. Case Temperature VCC=18V CL=.1uF 16 Fig. 22 N Channel Output Current vs. Case Temperature VCC=18V CL=.1uF 17 P Channel Output Current (A) N Channel Output Current (A) 15 16 14 15 13 12 -40 -20 0 20 40 60 80 100 14 -40 -20 0 20 40 60 80 100 Temperature ( C) o Temperature (oC) 7 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Fig. 23 14 Enable Threshold vs. Supply Voltage Fig. 24 1.0 High State Output Resistance vs. Supply Voltage 12 High State Output Resistance (Ohm) 0.8 Enable Threshold (V) 10 8 0.6 6 0.4 4 0.2 2 0 8 10 12 14 16 18 20 22 24 26 0.0 8 10 15 20 25 Supply Voltage (V) Supply Voltage (V) Fig. 25 1.0 Low-State Output Resistance vs. Supply Voltage Fig. 26 0 -2 VCC vs. P Channel Output Current CL=.1uF VIN=0-5V@1kHz Low-State Output Resistance (Ohms) 0.8 -4 P Channel Output Current (A) 8 10 15 20 25 -6 -8 -10 -12 -14 -16 -18 -20 -22 0.6 0.4 0.2 0.0 -24 8 10 15 20 25 Supply Voltage (V) Vcc Fig. 27 24 22 20 Vcc vs. N Channel Output Current CL=.1uF VIN=0-5V@1kHz N Channel Output Current (A) 18 16 14 12 10 8 6 4 2 0 8 10 15 20 25 Vcc 8 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Supply Bypassing, Grounding Practices and Output Lead inductance When designing a circuit to drive a high speed MOSFET utilizing the IXDN414/IXDI414, it is very important to observe certain design criteria in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. Say, for example, we are using the IXDN414 to charge a 5000pF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= V C / t, where V=25V C=5000pF & t=25ns we can determine that to charge 5000pF to 25 volts in 25ns will take a constant current of 5A. (In reality, the charging current won't be constant, and will peak somewhere around 8A). SUPPLY BYPASSING In order for our design to turn the load on properly, the IXDN414 must be able to draw this 5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse currentservice capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN414 to an absolute minimum. GROUNDING In order for the design to turn the load off properly, the IXDN414 must be able to drain this 5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDN414 and its load. Path #2 is between the IXDN414 and its power supply. Path #3 is between the IXDN414 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDN414. OUTPUT LEAD INDUCTANCE Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and it's load as short and wide as possible. If the driver must be placed farther than 2" (5mm) from the load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connected directly to the ground terminal of the load. 9 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: sales@ixys.net www.ixys.com IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: marcom@ixys.de Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: deiinfo@directedenergy.com www.directedenergy.com 10 Doc #9200-0244 R1 |
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